Diode and resistive memory device structures

ABSTRACT

In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to electronic devices, and moreparticularly, to designs of diodes and resistive memory devices.

2. Discussion of the Related Art

FIG. 1 illustrates a type of resistive memory device 30. The memorydevice 30 includes an electrode 32, a switching or active layer 34 onthe electrode 32, and an electrode 36 on the switching layer 34.Initially, assuming that the memory device 30 is unprogrammed, in orderto program the memory device 30, ground is applied to the electrode 32,while a positive voltage is applied to electrode 36, so that anelectrical potential V_(pg) is applied across the memory device 30 froma higher to a lower electrical potential in the direction from electrode36 to electrode 32. This causes electronic charge carriers in the formof electrons and/or holes to enter the layer 34, to provide that theoverall memory device 30 is in a conductive, low-resistance (programmed)state (A, FIG. 2). Upon removal of such potential the memory device 30remains in a conductive or low-resistance state having an on-stateresistance illustrated at B.

In the read step of the memory device 30 in its programmed (conductive)state, an electrical potential V_(r) is applied across the memory device30 from a higher to a lower electrical potential in the direction fromelectrode 36 to electrode 32. This electrical potential is less than theelectrical potential V_(pg) applied across the memory device 30 forprogramming (see above). In this situation, the memory device 130 willreadily conduct current, which indicates that the memory device 30 is inits programmed state.

In order to erase the memory device 30, a positive voltage is applied tothe electrode 32, while the electrode 36 is held at ground, so that anelectrical potential V_(er) is applied across the memory device 30 froma higher to a lower electrical potential in the direction of fromelectrode 32 to electrode 36. Application of this electrical potentialcauses electronic charge carriers to leave the layer 34 (C), switchingthe layer 34 to a high-resistance state, so that the overall memorydevice 30 is in a high-resistance (erased) state.

In the read step of the memory device 30 in its erased (substantiallynon-conductive) state, the electrical potential V_(r) is again appliedacross the memory device 30 from a higher to a lower electricalpotential in the direction from electrode 36 to electrode 32 asdescribed above. With the layer 34 (and memory device 30) in ahigh-resistance or substantially non-conductive state, the memory device30 will not conduct significant current, which indicates that the memorydevice 30 is in its erased state.

The structure and operation of conventional semiconductor diodes arewell known. Typically, a diode 20 is formed by providing adjoining p andn layers 22, 24 of material, to form a p-n junction (FIG. 3). Increasingelectrical potential applied across the diode 20 in the forwarddirection overcomes the threshold voltage V_(th) of the diode 20, whichthen conducts current in the forward direction, the level of currentbeing determined by the (relatively low) on-resistance of the diode 20.Increasing electrical potential applied across the diode 20 in thereverse direction does not cause significant conduction of current untilbreakdown occurs (at a relatively high voltage), whereupon the diode 20then conducts current in the reverse direction (FIG. 4).

Diodes of this type are used as access devices for resistive memorydevices in an array 40 including bit lines BL0, BL1, . . . and wordlines WL0, WL1, . . . (FIG. 5). In certain situations, such as when thediodes 20 are used as access devices for resistive memory devices 30 ina three-dimensional memory array (one array layer shown in FIG. 5),where resistive memory devices are already fabricated on a previouslyformed array layer, a low temperature diode fabrication sequence isneeded in order not to alter or destroy the operational characteristicsof devices already formed.

As will be understood, improvements in manufacturing and operationalefficiency of such a resistive memory device are being sought,particularly when used in a memory array with access diodes associatedtherewith.

Therefore, what is needed is an approach for improving these devices forthese particular needs.

SUMMARY OF THE INVENTION

Broadly stated, the present invention is a diode comprising a firstlayer comprising an oxide, and a second layer comprising an oxide incontact with the first layer.

Broadly stated, the invention is further an electronic device comprisinga diode and a resistive memory device in series, the diode comprising afirst layer comprising an oxide, and a second layer comprising an oxidein contact with the first layer, the resistive memory device comprisinga first electrode comprising one of the layers of the diode, a switchinglayer, and a second electrode.

The present invention is better understood upon consideration of thedetailed description below, in conjunction with the accompanyingdrawings. As will become readily apparent to those skilled in the artfrom the following description, there are shown and describedembodiments of this invention simply by way of the illustration of thebest mode to carry out the invention. As will be realized, the inventionis capable of other embodiments and its several details are capable ofmodifications and various obvious aspects, all without departing fromthe scope of the invention. Accordingly, the drawings and detaileddescription will be regarded as illustrative in nature and not asrestrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

The novel features believed characteristic of the invention are setforth in the appended claims. The invention itself, however, as well assaid preferred mode of use, and further objects and advantages thereof,will best be understood by reference to the following detaileddescription of illustrative embodiments when read in conjunction withthe accompanying drawings, wherein:

FIG. 1 illustrates a conventional diode;

FIG. 2 illustrates the operating characteristics of the diode of FIG. 1;

FIG. 3 illustrates a form of resistive memory device;

FIG. 4 illustrates the operating characteristics of the device of FIG.4;

FIG. 5 illustrates a memory array incorporating resistive memory devicesand diodes of FIGS. 1 and 3;

FIGS. 6-10 illustrate process steps in forming an embodiment of theinvention;

FIG. 11 illustrates an alternative step to the step of FIG. 10;

FIG. 12 illustrates another alternative step to the step of FIG. 10;

FIGS. 13-16 illustrate process steps in forming another embodiment ofthe invention;

FIGS. 17-22 illustrate process steps in forming yet another embodimentof the invention; and

FIGS. 23-26 illustrate portions of memory arrays incorporating resistivememory devices and diodes in accordance with the present invention.

DETAILED DESCRIPTION

Reference is now made in detail to specific embodiments of the presentinvention which illustrate the best mode presently contemplated by theinventors for practicing the invention.

FIGS. 6-10 illustrate the fabrication of a diode in accordance with thepresent invention. In this particular embodiment, a Ni layer 50 isprovided to a thickness of approximately 5000 Å (FIG. 6). With referenceto FIG. 7, an oxidation step is undertaken, either thermally or with anO/O₂ containing plasma such that a NiO_(x) oxide layer 52 is formed to athickness of 1000-2000 Å on the remaining Ni 50A. Next (FIG. 8), a Tilayer 54 is deposited on the NiO_(x) layer 52, and this Ti layer 54 isfully oxidized (FIG. 9) to form a TiO_(x) layer 56 on and in contactwith the NiO_(x) layer 52. Finally (FIG. 10), a metal layer 58 isdeposited on the TiO_(x) layer 56, so that the resulting structure 59 asshown in FIG. 10 is formed. The metal oxide NiO_(x) is known to be a ptype semiconductor, while the TiO_(x) is known to be an n typesemiconductor. The TiO_(x) and NiO_(x) layers form a diode 60, while theremaining Ni layer 50A and metal layer 58 form ohmic contact to thediode 60. All fabrication steps, including the oxidation steps describedabove, are undertaken at relatively low temperatures to achieve theobject pointed out above. That is, through this low temperature diodefabrication sequence, operational characteristics of devices alreadyformed are not altered, which might very well be the case if highertemperatures were used.

Other metal oxides such as CuO_(x) and CoO_(x) are also known to be ptype semiconductors, while other metal oxides such as ITO and ZnO_(x)are known to be n type semiconductors. The process described above couldreadily be changed to incorporate these oxides as appropriate in formingthe overall structure.

An alternative to the step described with regard to FIG. 10 is shown inFIG. 11. As such, after the structure of FIG. 9 is formed, an oxideswitching layer 62 is provided on the layer 56, and a metal layer 64 isprovided on the layer 62, forming the overall structure 65. In thisstructure 65, again, the layers 52, 56 form a diode 60, while the layers56, 62, 64 form a resistive memory device 66, with the layer 56 actingboth as a layer of the diode 60 and an electrode of the resistive memorydevice 66, so that the diode 60 and resistive memory device 66 are inseries.

FIG. 12 shows yet another alternative to the approach shown with regardto FIG. 10. Again, starting with the structure of FIG. 9, and withdirect reference to FIG. 12, a bottom electrode 68 is formed on thelayer 56, a switching oxide layer 70 is formed on the electrode 68, anda top electrode 72 is formed on the switching layer 70. This results inthe overall structure shown at 73. As such, again, the layers 52, 56form a diode 60, while the layers 68, 70, 72 form a resistive memorydevice 74 in series with that diode 60.

FIGS. 13-16 illustrate another embodiment of the invention. As shown inFIG. 13, a silicon layer 80 of a first conductivity type is provided.This layer 80 may be either amorphous silicon, polycrystalline silicon,or epitaxial silicon (including single-crystal epitaxial silicon).Provided on the layer 80 is another layer 82 of silicon of aconductivity type opposite the conductivity type of the layer 80. Thislayer may also be amorphous silicon, polycrystalline silicon orepitaxial silicon (including single-crystal epitaxial silicon). Thesetwo layers 80, 82 form a diode. Provided on the silicon layer 82 is anoxide switching layer 84 (FIG. 15), of for example, Al_(x)O_(y),HfO_(x), HfSiO_(x), ZrO_(x), TiO_(x), CuO_(x), or Ta_(x)O_(y). Providedon this layer 84 is an electrode 86 of, for example, metal, i.e., Ni,Co, Pt, Ta, Ti, or W, or a metal nitride, i.e., Tin, Tan, or Wn, or an ntype polycrystalline silicon material. This makes up the structure 87.In this embodiment, the layers 80, 82 make up a diode 88, while thelayers 82, 84, 84 make up a resistive memory device 90, so that thelayer 82 is both a portion of the diode 88 and an electrode of theresistive memory device 90, with the diode 88 and resistive memorydevice 90 in series.

FIGS. 17-22 illustrate fabrication of another embodiment of theinvention. Initially, as shown in FIG. 17, an electrode 100 of forexample, metal, is provided. A silicon layer 102 of a first conductivitytype, either amorphous or polycrystalline silicon, is provided on theelectrode 100 (FIG. 18). With reference to FIG. 19, an interlayerdielectric 104 is formed on the silicon layer 102, and the interlayerdielectric 104 is patterned by appropriate photoresist techniques toprovide openings therethrough to the silicon layer 102 lying therebelow(FIG. 20).

With further reference to FIG. 20, an implant step is undertaken, usingthe patterned interlayer dielectric as a mask, to form regions 106A,106B, . . . in the silicon layer 102 of a conductivity type oppositethat of the silicon layer 102 itself. Next, switching oxide 108A, 108B,. . . is provided in each of the openings in the interlayer dielectriclayer by for example deposition, and a polishing step is undertaken toplanarize the resulting structure (FIG. 21). Then, an electrode 110 ofmetal is provided over the resulting structure (FIG. 22). Anothersilicon layer 112 is provided over the resulting structure, and theprocess thus far described is repeated to form the multilayer structureof FIG. 22.

As an example, the silicon of the layer 102 and the silicon of theimplanted region 106A form a diode 114. The silicon of the implantedregion 106A, the oxide region 108A, and the electrode 110 form aresistive memory device 116 in series with that diode 114. In this way,a multi-level structure can be formed. As in the formation of the diodeof FIGS. 6-10, all fabrication steps are undertaken at relatively lowtemperatures to achieve the object pointed out above. That is, throughthis low temperature diode fabrication sequence, operationalcharacteristics of devices already formed are not altered, which mightvery well be the case if higher temperatures were used.

FIGS. 23-26 illustrate examples of the use of the various embodiments ofthe present invention. With reference to FIG. 23, the resistive memorydevice 30 of FIG. 1 can be placed in series with the diode 59 of FIG.10, so that the resulting structure runs in series between BL0 and WL0.FIG. 24 shows the structure of 65 of FIG. 11 connected in series betweenBL0 and WL0. FIG. 25 illustrates the device 73 of FIG. 12 connected inseries between BL0 and WL0. FIG. 26 illustrates the device 87 of FIG. 16connected in series between BL0 and WL0.

It will therefore be seen that low-temperature fabrication sequences areprovided as desired. Also, various embodiments of resistive memorydevices with high manufacturing and operational efficiency are hereinprovided.

The foregoing description of the embodiments of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed. Other modifications or variations are possible in light ofthe above teachings.

The embodiments were chosen and described to provide the bestillustration of the principles of the invention and its practicalapplication to thereby enable one of ordinary skill of the art toutilize the invention in various embodiments and with variousmodifications as are suited to the particular use contemplated. All suchmodifications and variations are within the scope of the invention asdetermined by the appended claims when interpreted in accordance withthe breadth to which they are fairly, legally and equitably entitled.

1. A diode comprising a first layer, and a second layer comprising anoxide in contact with the first layer.
 2. The diode of claim 1 whereinthe second layer comprises a metal oxide.
 3. The diode of claim 2wherein the metal oxide is selected from the group consisting ofNiO_(x), CuO_(x), and CoO_(x).
 4. The diode of claim 2 wherein the metaloxide is selected from the group consisting of TiO_(x), ITO, andZnO_(x).
 5. The diode of claim 1 wherein the first layer comprises anoxide.
 6. The diode of claim 5 wherein the first layer comprises a metaloxide.
 7. An electronic device comprising a diode and a resistive memorydevice in series, the diode comprising a first layer comprising anoxide, and a second layer comprising an oxide in contact with the firstlayer, the resistive memory device comprising a first electrodecomprising one of the layers of the diode, a switching layer, and asecond electrode.
 8. The electronic device of claim 7 wherein at leastone of the layers of the diode comprises a metal oxide.
 9. Theelectronic device of claim 8 wherein the metal oxide is selected fromthe group consisting of NiO_(x), CuO_(x), and CoO_(x).
 10. Theelectronic device of claim 8 wherein the metal oxide is selected fromthe group consisting of TiO_(x), ITO, and ZnO_(x).
 11. An electronicdevice comprising a diode and a resistive memory device in series, thediode comprising a first layer comprising silicon, and a second layercomprising silicon in contact with the first layer, the resistive memorydevice comprising a first electrode comprising one of the layers of thediode, a switching layer, and a second electrode.
 12. The electronicdevice of claim 11 wherein the silicon of at least one of the first andsecond layers comprises amorphous silicon.
 13. The electronic device ofclaim 11 wherein the silicon of at least one of the first and secondlayers comprises polycrystalline silicon.
 14. The electronic device ofclaim 11 wherein the silicon of at least one of the first and secondlayers comprises epitaxial silicon.
 15. The electronic device of claim11 wherein the silicon of at least one of the first and second layerscomprises single crystal epitaxial silicon.
 16. An electronic devicecomprising a diode and a resistive memory device in series, the diodecomprising a first layer comprising an oxide, and a second layercomprising an oxide in contact with the first layer, the resistivememory device comprising a first electrode on a layer of the diode, aswitching layer, and a second electrode.
 17. The electronic device ofclaim 16 wherein at least one of the layers of the diode comprises ametal oxide.
 18. The electronic device of claim 17 wherein the metaloxide is selected from the group consisting of NiO_(x), CuO_(x), andCoO_(x).
 19. The electronic device of claim 17 wherein the metal oxideis selected from the group consisting of TiO_(x), ITO, and ZnO_(x). 20.An electronic device comprising a diode and a resistive memory device inseries, the diode comprising a layer comprising a region of a firstconductivity type and a region of a second conductivity type oppositethe first conductivity type, the resistive memory device comprising afirst electrode comprising the region of the first conductivity type, aswitching layer, and a second electrode.
 21. The electronic device ofclaim 20 wherein the layer comprising a region of a first conductivitytype and a region of a second conductivity type opposite the firstconductivity type comprises silicon.
 22. The electronic device of claim21 wherein the silicon comprises amorphous silicon.
 23. The electronicdevice of claim 21 wherein the silicon comprises polycrystallinesilicon.